BCP5610TA
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Краткое описание:
NPN BJT Transistor, 80V VCEO, 1A IC, 150MHz, SOT-223, SMD
Дополнительная информация
NPN silicon bipolar junction transistor in a SOT-223 surface mount package. Features 80V collector-emitter breakdown voltage (VCEO), 1A maximum collector current (IC), and 500mV collector-emitter saturation voltage. Operates with a 150MHz transition frequency and 125MHz gain bandwidth product. Offers a wide operating temperature range from -55°C to 150°C with 2W power dissipation. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.55mm |
| Height | 1.65mm |
| Length | 6.55mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 150MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 125MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
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