BCV26E6327HTSA1
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PNP BJT Transistor, 30V, 500mA, SOT-23, Surface Mount
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 30V. Operates with a collector-base voltage of 40V and emitter-base voltage of 10V. This surface mount component is housed in a SOT-23 package and offers a transition frequency of 200MHz. Rated for a maximum power dissipation of 360mW, it operates across a temperature range of -65°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 0.9mm |
| Length | 2.9mm |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 1 |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 500mA |
| Max Power Dissipation | 360mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 10V |
| Collector Base Voltage (VCBO) | 40V |
| Collector-emitter Voltage-Max | 1V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1V |
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