BCW30LT1G
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Краткое описание:
PNP BJT Transistor, 32V, 100mA, SOT-23
Дополнительная информация
PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a maximum collector emitter voltage (VCEO) of 32V and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 215 and a low collector emitter saturation voltage of -300mV. Operates across a wide temperature range from -55°C to 150°C with a power dissipation of 225mW. This RoHS compliant component is supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| hFE Min | 215 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | -32V |
| Package Quantity | 1 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Breakdown Voltage | 32V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 225mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 32V |
| Collector-emitter Voltage-Max | 300mV |
| Collector Emitter Voltage (VCEO) | 32V |
| Collector Emitter Breakdown Voltage | 32V |
| Collector Emitter Saturation Voltage | -300mV |
