BCW66GLT1G
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Краткое описание:
NPN BJT Transistor 45V 0.8A 100MHz SOT-23
Дополнительная информация
NPN bipolar junction transistor (BJT) in a SOT-23-3 package. Features a 45V collector-emitter breakdown voltage and 800mA maximum collector current. Offers a 100MHz transition frequency and a minimum hFE of 110. Maximum power dissipation is 300mW. Operates from -55°C to 150°C.
| RoHS | Compliant |
| Width | 1.3mm |
| Height | 0.94mm |
| Length | 2.9mm |
| hFE Min | 110 |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Max Frequency | 100MHz |
| Current Rating | 800mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 45V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 800mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 75V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
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