BCW66GLT3G
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NPN BJT Transistor, 45V VCEO, 800mA Ic, 100MHz, SOT-23-3
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) in SOT-23-3 package. Features a 45V Collector-Emitter Voltage (VCEO) and 75V Collector Base Voltage (VCBO). Offers a maximum collector current of 800mA and a power dissipation of 300mW. Operates with a minimum hFE of 50 and a transition frequency of 100MHz. Packaged on a 10000-piece tape and reel, this RoHS compliant component is lead-free and suitable for operation between -55°C and 150°C.
| RoHS | Compliant |
| Width | 1.4mm |
| Height | 1.01mm |
| Length | 3.04mm |
| hFE Min | 50 |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Max Frequency | 100MHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 10000 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 800mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 75V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
