BCW66HTA
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NPN BJT Transistor, 45V VCEO, 800mA IC, 100MHz, SOT-23
Дополнительная информация
NPN bipolar junction transistor in a SOT-23 package, featuring a 45V collector-emitter breakdown voltage and 800mA continuous collector current. This silicon transistor offers a 100MHz transition frequency and a maximum power dissipation of 330mW. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1.1mm |
| Length | 3mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 100MHz |
| Current Rating | 800mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 45V |
| Package Quantity | 3000 |
| Power Dissipation | 330mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 800mA |
| Max Power Dissipation | 330mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 800mA |
| Collector Base Voltage (VCBO) | 75V |
| Collector-emitter Voltage-Max | 700mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 700mV |
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