BCW68GLT1G

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BCW68GLT1G - Onsemi
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Краткое описание: PNP BJT Transistor, 45V VCEO, 800mA IC, 100MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of 45V and a maximum collector current of 800mA. Offers a gain bandwidth product (hFE) of 120 at 100MHz, with a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C and has a power dissipation of 300mW. Packaged on a 3000-piece tape and reel.
RoHS Compliant
Width 1.4mm
Height 1.01mm
Length 3.04mm
hFE Min 120
Polarity PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 100MHz
Current Rating -800mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage -45V
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 800mA
Max Power Dissipation 225mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector-emitter Voltage-Max 1.5V
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage -45V
Collector Emitter Saturation Voltage -1.5V