BCX17T116
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Краткое описание:
NPN BJT Transistor, 45V VCEO, 0.5A IC, 200MHz fT, SMT
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 45V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Packaged in a TO-236-3 (SST3) surface mount configuration with copper, tin, and silver plating. Rated for a maximum power dissipation of 425mW and operates within a temperature range of -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 100 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | TO-236-3 |
| Current Rating | -500mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -45V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Collector Current | 500mA |
| Max Power Dissipation | 425mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -500mA |
| Collector Base Voltage (VCBO) | -50V |
| Collector-emitter Voltage-Max | 620mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -620mV |
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