BCX5610TA
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Краткое описание:
NPN BJT 80V 1A 150MHz SOT-89 SM Transistor
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features 80V collector-emitter breakdown voltage, 1A maximum collector current, and a 150MHz transition frequency. Housed in a SOT-89 surface mount plastic package, this component offers a minimum hFE of 63 and a maximum power dissipation of 1W. It operates within a temperature range of -65°C to 150°C and is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.5mm |
| Length | 4.6mm |
| Weight | 0.001834oz |
| hFE Min | 63 |
| Polarity | NPN |
| Frequency | 150MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-89 |
| Max Frequency | 150MHz |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Power Dissipation | 1W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
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