BD13510STU

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BD13510STU - Onsemi
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Краткое описание: 45V 1.5A NPN BJT Transistor, TO-126, 1.25W
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Power Bipolar Junction Transistor (BJT) with a maximum collector current of 1.5A and a collector-emitter voltage of 45V. Features a low collector-emitter saturation voltage of 500mV and a minimum DC current gain (hFE) of 40. Encased in a TO-126 package for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 1.25W.
RoHS Compliant
Mount Through Hole
Width 3.45mm
Height 11.2mm
Length 8.3mm
Weight 0.761g
hFE Min 40
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-126
Current Rating 1.5A
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 45V
Package Quantity 60
Power Dissipation 1.25W
Number of Elements 1
Max Collector Current 1.5A
Max Power Dissipation 1.25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 45V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 500mV

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