BD135G

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BD135G - Onsemi
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Краткое описание: NPN BJT Transistor, 1.5A, 45V, TO-225
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Power Bipolar Junction Transistor (BJT) in a TO-225 package. Features a maximum collector current of 1.5A and a collector-emitter voltage of 45V. Offers a low collector-emitter saturation voltage of 500mV and a minimum hFE of 25. Operates across a wide temperature range from -55°C to 150°C with a power dissipation of 1.25W. This RoHS compliant component is supplied in bulk packaging.
RoHS Compliant
Width 2.66mm
Height 11.04mm
Length 7.74mm
Series BD135
hFE Min 25
Polarity NPN
Lead Free Lead Free
Packaging Bulk
Package/Case TO-225-3
Current Rating 1.5A
RoHS Compliant Yes
DC Rated Voltage 45V
Package Quantity 500
Power Dissipation 1.25W
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Max Collector Current 1.5A
Max Power Dissipation 1.25W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 45V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 500mV

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