BD139-16
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NPN BJT Transistor, 80V, 1.5A, SOT-32
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) in a SOT-32 through-hole package. Features a maximum collector current of 1.5A and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 100 and a maximum power dissipation of 1.25W. Operates across a temperature range of -65°C to 150°C. RoHS compliant with tin matte contact plating.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.7mm |
| Height | 10.8mm |
| Length | 7.8mm |
| hFE Min | 100 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | SOT-32 |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 2000 |
| Power Dissipation | 1.25W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 1.25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
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