BD14010STU

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BD14010STU - Onsemi
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Краткое описание: PNP BJT Transistor, 80V, 1.5A, TO-126, Through Hole
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) with a maximum collector current of 1.5A and a collector-emitter voltage of 80V. Features a TO-126 package for through-hole mounting, offering a maximum power dissipation of 12.5W. Operates within a temperature range of -55°C to 150°C with a minimum hFE of 40. This RoHS compliant component is supplied in a rail/tube package.
RoHS Compliant
Mount Through Hole
Width 3.25mm
Height 11mm
Length 8mm
Weight 0.761g
hFE Min 40
Polarity PNP
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-126
Current Rating -1.5A
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage -80V
Package Quantity 60
Power Dissipation 1.25W
Number of Elements 1
Reach SVHC Compliant No
Max Collector Current 1.5A
Max Power Dissipation 12.5W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -80V
Collector-emitter Voltage-Max 500mV
Collector Emitter Voltage (VCEO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage -500mV

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