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Краткое описание:
NPN BJT Transistor 60V 4A SOT-32
Дополнительная информация
NPN bipolar junction transistor (BJT) for through-hole mounting in a SOT-32 package. Features a 60V collector-emitter breakdown voltage and a continuous collector current rating of 4A. Offers a minimum DC current gain (hFE) of 750 and a maximum power dissipation of 40W. Operates across a temperature range of -65°C to 150°C. RoHS compliant with tin, matte contact plating.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 2.7mm |
| Height | 10.8mm |
| Length | 7.8mm |
| hFE Min | 750 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | SOT-32 |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 60V |
| Package Quantity | 50 |
| Power Dissipation | 40W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 4A |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 4A |
| Collector Base Voltage (VCBO) | 60V |
| Collector-emitter Voltage-Max | 2.8V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 2.8V |
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