BDS11-JQR-B
Производится
Краткое описание:
NPN BJT 80V 15A TO-257AB Through Hole Power Transistor
Дополнительная информация
NPN bipolar junction transistor (BJT) for power applications, featuring a TO-257AB metal package with through-hole mounting. This single-element transistor operates with a maximum collector-emitter voltage of 80V and a maximum DC collector current of 15A. It offers a minimum DC current gain of 40 at 0.5A, 15 at 5A, and 5 at 10A, all at 4V. The component has a maximum power dissipation of 43750mW and a transition frequency of 3MHz, with an operating temperature range from -65°C to 200°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| Category | Bipolar Power |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | 57027, 73138,U1395 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Package/Case | TO-257AB |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.54 |
| Package Material | Metal |
| Package Width (mm) | 5.33(Max) |
| Package Height (mm) | 10.92(Max) |
| Package Length (mm) | 10.92(Max) |
| Radiation Hardening | No |
| Minimum DC Current Gain | [email protected]@4V|15@5A@4V|5@10A@4V |
| Seated Plane Height (mm) | 16.89(Max) |
| Max Operating Temperature | 200°C |
| Maximum Power Dissipation | 43750mW |
| Min Operating Temperature | -65°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 15A |
| Maximum Emitter Base Voltage | 5V |
| Maximum Transition Frequency | 3(Min)MHz |
| Maximum Collector Base Voltage | 80V |
| Maximum Collector-Emitter Voltage | 80V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
