BDS11SMD-JQR-A

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BDS11SMD-JQR-A - TT
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Краткое описание: NPN BJT 80V 15A SMD Single Transistor
Производитель TT
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 80V and a maximum DC collector current of 15A. This single-element transistor is housed in a 3-pin SMD-1 ceramic package with dimensions up to 11.58mm (L) x 16.02mm (W) x 3.6mm (H). Operating temperature range is -65°C to 200°C, with a minimum DC current gain of 40 at 0.5A/4V.
PCB 3
ECCN EAR99
PPAP No
Type NPN
Category Bipolar Power
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code 57027, 73138,U1395
Pin Count 3
Automotive No
Schedule B 8541290080
Package/Case SMD-1
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Package Material Ceramic
Package Width (mm) 16.02(Max)
Package Family Name SMD
Package Height (mm) 3.6(Max)
Package Length (mm) 11.58(Max)
Radiation Hardening No
Minimum DC Current Gain [email protected]@4V|15@5A@4V|5@10A@4V
Seated Plane Height (mm) 3.6(Max)
Max Operating Temperature 200°C
Maximum Power Dissipation 43750mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 15A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 3(Min)MHz
Maximum Collector Base Voltage 80V
Maximum Collector-Emitter Voltage 80V

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