BDS12SMD-JQR
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Краткое описание:
NPN BJT 100V 15A SMD Single Ceramic Power Transistor
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 100V collector-emitter voltage and a 15A continuous collector current. This single-element transistor is housed in an SMD-1 package with a ceramic material, measuring up to 11.58mm in length, 16.02mm in width, and 3.6mm in height. Operating temperature range is -65°C to 200°C, with a maximum power dissipation of 43750mW. DC current gain is specified as a minimum of 40 at 0.5A, 15 at 5A, and 5 at 10A, all at 4V.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | NPN |
| Category | Bipolar Power |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | 57027, 73138,U1395 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Package/Case | SMD-1 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Package Material | Ceramic |
| Package Width (mm) | 16.02(Max) |
| Package Family Name | SMD |
| Package Height (mm) | 3.6(Max) |
| Package Length (mm) | 11.58(Max) |
| Radiation Hardening | No |
| Minimum DC Current Gain | [email protected]@4V|15@5A@4V|5@10A@4V |
| Seated Plane Height (mm) | 3.6(Max) |
| Max Operating Temperature | 200°C |
| Maximum Power Dissipation | 43750mW |
| Min Operating Temperature | -65°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 15A |
| Maximum Emitter Base Voltage | 5V |
| Maximum Transition Frequency | 3(Min)MHz |
| Maximum Collector Base Voltage | 100V |
| Maximum Collector-Emitter Voltage | 100V |
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