BDS12SMD05-JQR

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BDS12SMD05-JQR - TT
Краткое описание: NPN BJT 100V 15A Single SMD Power Transistor
Производитель TT
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 100V collector-emitter voltage and 15A continuous collector current. This single-element, 3-pin device is housed in a Ceramic SMD-0.5 package (TO-276AA) with no leads, measuring 7.54mm x 10.16mm x 2.68mm (Max). Operating temperature range is -65°C to 200°C, with a maximum power dissipation of 43750mW. DC current gain specifications include [email protected]@4V, 15@5A@4V, and 5@10A@4V.
PCB 3
ECCN EAR99
PPAP No
Type NPN
Jedec TO-276AA
Category Bipolar Power
HTS Code 8541290095
Material Si
Mounting Surface Mount
Cage Code 57027, 73138,U1395
Pin Count 3
Automotive No
Lead Shape No Lead
Schedule B 8541290080
Package/Case SMD-0.5
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Package Material Ceramic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 10.16
Package Description Surface Mount Device
Package Family Name SMD
Package Height (mm) 2.68(Max)
Package Length (mm) 7.54
Radiation Hardening No
Minimum DC Current Gain [email protected]@4V|15@5A@4V|5@10A@4V
Seated Plane Height (mm) 3.18(Max)
Max Operating Temperature 200°C
Maximum Power Dissipation 43750mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 15A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 3(Min)MHz
Maximum Collector Base Voltage 100V
Maximum Collector-Emitter Voltage 100V

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