BDS13-JQR
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Краткое описание:
PNP BJT 60V 15A TO-257AB Through Hole Power Transistor
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for through-hole mounting, featuring a TO-257AB metal package with 3 pins and a tab. This single-element silicon transistor offers a maximum collector-emitter voltage of 60V and a maximum DC collector current of 15A, with a power dissipation of 43750mW. Key DC current gain specifications include 40 at 0.5A/4V, 15 at 5A/4V, and 5 at 10A/4V, operating within a temperature range of -65°C to 200°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Type | PNP |
| Category | Bipolar Power |
| HTS Code | 8541290095 |
| Material | Si |
| Mounting | Through Hole |
| Cage Code | 57027, 73138,U1395 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Package/Case | TO-257AB |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Pin Pitch (mm) | 2.54 |
| Package Material | Metal |
| Package Width (mm) | 5.33(Max) |
| Package Height (mm) | 10.92(Max) |
| Package Length (mm) | 10.92(Max) |
| Radiation Hardening | No |
| Minimum DC Current Gain | [email protected]@4V|15@5A@4V|5@10A@4V |
| Seated Plane Height (mm) | 16.89(Max) |
| Max Operating Temperature | 200°C |
| Maximum Power Dissipation | 43750mW |
| Min Operating Temperature | -65°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 15A |
| Maximum Emitter Base Voltage | 5V |
| Maximum Transition Frequency | 3(Min)MHz |
| Maximum Collector Base Voltage | 60V |
| Maximum Collector-Emitter Voltage | 60V |
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