BDS18SMD-JQR
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Краткое описание:
PNP BJT 120V 8A SMD Power Transistor
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 120V and a maximum DC collector current of 8A. This single-element, ceramic-packaged device offers a maximum power dissipation of 43750mW and operates across a temperature range of -65°C to 200°C. The SMD-0.5 package measures 7.54mm in length, 10.16mm in width, and 2.68mm in height, with a 3-pin configuration. Minimum DC current gain is 40 at 0.5A/2V, and the transition frequency is a minimum of 30MHz.
| PCB | 3 |
| ECCN | EAR99 |
| PPAP | No |
| Type | PNP |
| Jedec | TO-276AA |
| Category | Bipolar Power |
| HTS Code | 8541290075 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | 57027, 73138,U1395 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Package/Case | SMD-0.5 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2002/95/EC |
| Package Material | Ceramic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Width (mm) | 10.16 |
| Package Description | Surface Mount Device |
| Package Family Name | SMD |
| Package Height (mm) | 2.68(Max) |
| Package Length (mm) | 7.54 |
| Radiation Hardening | No |
| Minimum DC Current Gain | [email protected]@2V|15@4A@2V |
| Seated Plane Height (mm) | 3.18(Max) |
| Max Operating Temperature | 200°C |
| Maximum Power Dissipation | 43750mW |
| Min Operating Temperature | -65°C |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 8A |
| Maximum Emitter Base Voltage | 5V |
| Maximum Transition Frequency | 30(Min)MHz |
| Maximum Collector Base Voltage | 120V |
| Maximum Collector-Emitter Voltage | 120V |
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