BDS18SMD05-JQR-B

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BDS18SMD05-JQR-B - TT
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Краткое описание: PNP BJT 120V 8A Single Si SMD-0.5 3-Pin
Производитель TT
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 120V and a continuous collector current of 8A. This single-element transistor is housed in a 3-pin SMD-0.5 package with ceramic material, measuring 7.54mm x 10.16mm x 2.68mm. Operating temperature range spans from -65°C to 200°C, with a minimum DC current gain of 40 at 0.5A and 2V.
PCB 3
ECCN EAR99
PPAP No
Type PNP
Jedec TO-276AA
Category Bipolar Power
HTS Code 8541290075
Material Si
Mounting Surface Mount
Cage Code 57027, 73138,U1395
Pin Count 3
Automotive No
Lead Shape No Lead
Schedule B 8541290080
Package/Case SMD-0.5
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Package Material Ceramic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 10.16
Package Description Surface Mount Device
Package Family Name SMD
Package Height (mm) 2.68(Max)
Package Length (mm) 7.54
Radiation Hardening No
Minimum DC Current Gain [email protected]@2V|15@4A@2V
Seated Plane Height (mm) 3.18(Max)
Max Operating Temperature 200°C
Maximum Power Dissipation 43750mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Maximum DC Collector Current 8A
Maximum Emitter Base Voltage 5V
Maximum Transition Frequency 30(Min)MHz
Maximum Collector Base Voltage 120V
Maximum Collector-Emitter Voltage 120V

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