BDW93C

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BDW93C - Stmicroelectronics
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Краткое описание: 100V 12A NPN BJT Power Darlington Transistor TO-220
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Silicon Power Darlington Transistor, TO-220 package, featuring a 100V Collector-Emitter Voltage (VCEO) and 100V Collector-Base Voltage (VCBO). This through-hole component offers a maximum collector current of 12A and a power dissipation of 80W, with a minimum hFE of 100. Operating temperature range is -65°C to 150°C, and it is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.6mm
Height 9.15mm
Length 10.4mm
hFE Min 100
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220
Current Rating 12A
RoHS Compliant Yes
DC Rated Voltage 100V
Package Quantity 50
Power Dissipation 80W
Number of Elements 1
Reach SVHC Compliant No
Max Collector Current 12A
Max Power Dissipation 80W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 2.5V
Collector Base Voltage (VCBO) 100V
Collector-emitter Voltage-Max 3V
Collector Emitter Voltage (VCEO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V

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