BDX53BTU

Снят с производства
BDX53BTU - Onsemi
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Краткое описание: NPN BJT 80V 8A TO-220 Darlington Transistor
Производитель Onsemi
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN bipolar junction transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 8A and a collector-emitter breakdown voltage of 80V. Offers a high DC current gain (hFE) of 750 minimum and a maximum power dissipation of 60W. Operates across a wide temperature range from -65°C to 150°C, with a collector-emitter saturation voltage of 2V. This RoHS compliant component is lead-free and packaged in rails/tubes.
RoHS Compliant
Mount Through Hole
Weight 1.8g
hFE Min 750
Polarity NPN
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Current Rating 8A
RoHS Compliant Yes
DC Rated Voltage 80V
Package Quantity 50
Power Dissipation 60W
Number of Elements 1
Max Collector Current 8A
Max Power Dissipation 60W
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 8A
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 2V
Collector Emitter Voltage (VCEO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 2V

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