BDY56-JQR-A

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BDY56-JQR-A - TT
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Краткое описание: NPN BJT 120V 15A TO-3 Power Transistor
Производитель TT
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Дополнительная информация

NPN bipolar junction transistor (BJT) for power applications. Features a maximum collector-emitter voltage of 120V and a maximum DC collector current of 15A. This single-element transistor is housed in a TO-3 metal package with a through-hole mounting style. It offers a minimum DC current gain of 20 at 4A and 4V, with a typical transition frequency of 10MHz. The package dimensions are 39.94mm (Max) length, 26.67mm (Max) width, and 11.43mm (Max) height.
PCB 2
Tab Tab
ECCN EAR99
PPAP No
Type NPN
Jedec TO-204-AA
Category Bipolar Power
HTS Code 8541290095
Mounting Through Hole
Cage Code 57027, 73138,U1395
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Package/Case TO-3
AEC Qualified No
Configuration Single
RoHS Versions 2002/95/EC
Pin Pitch (mm) 11.18(Max)
Package Material Metal
Basic Package Type Through Hole
Package Width (mm) 26.67(Max)
Package Description Transistor Outline Package
Package Family Name TO-204-AA
Package Height (mm) 11.43(Max)
Package Length (mm) 39.94(Max)
Radiation Hardening No
Minimum DC Current Gain 20@4A@4V
Seated Plane Height (mm) 11.43(Max)
Maximum Power Dissipation 117000mW
Number of Elements per Chip 1
Maximum DC Collector Current 15A
Maximum Transition Frequency 10(Typ)MHz
Maximum Collector-Emitter Voltage 120V

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