BF2040WH6814XTSA1
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Краткое описание:
RF FET, N-Channel, 10V, 40mA, 800MHz, SOT, Surface Mount
Дополнительная информация
Ultra High Frequency RF Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, 1-Element, Silicon. Features 800MHz frequency, 23dB gain, and 1.6dB noise figure. Operates with a continuous drain current of 40mA and a drain to source breakdown voltage of 10V. Packaged in a SOT-343, surface mount package with tin contact plating, this RoHS compliant component offers a maximum power dissipation of 200mW.
| Gain | 23dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.8mm |
| Length | 2mm |
| Polarity | N-CHANNEL |
| Frequency | 800MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Noise Figure | 1.6dB |
| Package/Case | SOT |
| Test Voltage | 5V |
| Max Frequency | 1GHz |
| Current Rating | 40mA |
| RoHS Compliant | Yes |
| Voltage Rating | 8V |
| Contact Plating | Tin |
| Package Quantity | 3000 |
| Input Capacitance | 2.9pF |
| Power Dissipation | 200mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 7V |
| Continuous Drain Current (ID) | 40mA |
| Drain to Source Voltage (Vdss) | 10V |
| Drain to Source Breakdown Voltage | 10V |
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