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Краткое описание:
300V 50mA NPN BJT TO-92 Small Signal Transistor
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 300V collector-emitter breakdown voltage and a 50mA maximum collector current. Offers a 60MHz transition frequency and a minimum hFE of 50. Packaged in a TO-92-3 through-hole mount configuration, this lead-free component operates from -55°C to 150°C with 830mW power dissipation.
| RoHS | Compliant |
| Mount | Through Hole |
| hFE Min | 50 |
| Polarity | NPN |
| Frequency | 60MHz |
| Lead Free | Lead Free |
| Packaging | Ammo Pack |
| Package/Case | TO-92-3 |
| Current Rating | 50mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 300V |
| Package Quantity | 2000 |
| Power Dissipation | 830mW |
| Number of Elements | 1 |
| Transition Frequency | 60MHz |
| Max Collector Current | 50mA |
| Max Power Dissipation | 830mW |
| Gain Bandwidth Product | 60MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
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