BF621TA
Увеличить
Краткое описание:
PNP BJT Transistor, 300V V(BR)CEO, 50mA I(C), 100MHz f(T), SMT
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V Collector Base Voltage (VCBO) and 100V Collector Emitter Breakdown Voltage. Offers a maximum collector current of 50mA and a transition frequency of 100MHz. Packaged in a TO-236-3 surface mount case, this component operates within a temperature range of -65°C to 150°C.
| RoHS | Not Compliant |
| Mount | Surface Mount |
| Width | 2.6mm |
| Height | 1.6mm |
| Length | 4.6mm |
| Weight | 0.004603oz |
| Polarity | PNP |
| Lead Free | Contains Lead |
| Packaging | Cut Tape |
| Package/Case | TO-236-3 |
| Current Rating | -50mA |
| RoHS Compliant | No |
| DC Rated Voltage | -300V |
| Package Quantity | 1 |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 1W |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 300V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Breakdown Voltage | 100V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
