BF776H6327XTSA1
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4
Дополнительная информация
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4
| Gain | 24dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | NPN |
| Frequency | 40GHz |
| Packaging | Tape and Reel |
| Package/Case | SOT-343 |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 1 |
| Power Dissipation | 200mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 46GHz |
| Max Breakdown Voltage | 4.7V |
| Max Collector Current | 50mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 1.2V |
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Voltage (VCEO) | 4V |
| Collector Emitter Breakdown Voltage | 4.7V |
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