BF908WR,115

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BF908WR,115 - NXP
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Краткое описание: N-CH MOSFET 12V 40mA 200MHz Dual Gate SMT
Производитель NXP
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

N-channel dual-gate MOSFET for surface mount applications, featuring a 12V drain-to-source voltage rating and 40mA continuous drain current. Operates up to 1GHz with a 0.6dB noise figure, suitable for high-frequency circuits. Packaged in a compact 2.2mm x 1.35mm x 1mm CMPAK-4 package, it offers a wide operating temperature range from -65°C to 150°C and is RoHS compliant with tin-matte contact plating.
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Polarity N-CHANNEL
Frequency 200MHz
Lead Free Lead Free
Packaging Tape and Reel
Noise Figure 0.6dB
Output Power 300mW
Test Voltage 8V
Max Frequency 1GHz
Current Rating 40mA
RoHS Compliant Yes
Voltage Rating 12V
Contact Plating Tin, Matte
Package Quantity 1
Input Capacitance 1.8pF
Number of Elements 1
Max Power Dissipation 300mW
DS Breakdown Voltage-Min 8V
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 40mA
Drain to Source Voltage (Vdss) 12V

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