BF992,215
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Краткое описание:
N-Channel Dual-Gate RF MOSFET, 200MHz, 20V, 40mA, SOT-143
Дополнительная информация
N-channel dual-gate MOSFET, surface mount, in a SOT-143 4-pin package. Features a 20V drain-to-source voltage (Vdss) and 8V gate-to-source voltage (Vgs). Operates up to 200MHz with a 1.2dB noise figure. Continuous drain current (ID) is 40mA, with a maximum power dissipation of 200mW. Package dimensions are 3mm length, 1.4mm width, and 1mm height. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3mm |
| Polarity | N-CHANNEL |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Noise Figure | 1.2dB |
| Package/Case | TO-253-4 |
| Test Voltage | 10V |
| Current Rating | 40mA |
| RoHS Compliant | Yes |
| Voltage Rating | 20V |
| Contact Plating | Tin, Matte |
| Package Quantity | 1 |
| Input Capacitance | 1.7pF |
| Power Dissipation | 200mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Power Dissipation | 200mW |
| DS Breakdown Voltage-Min | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Gate to Source Voltage (Vgs) | 8V |
| Continuous Drain Current (ID) | 40mA |
| Drain to Source Voltage (Vdss) | 20V |
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