BFG135A

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BFG135A - Infineon
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Краткое описание: RF NPN BJT Transistor 15V 0.15A SOT-223 Surface Mount
Производитель Infineon
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

RF Transistor, NPN silicon, single dual emitter configuration, designed for surface mount applications. Features a 15V maximum collector-emitter voltage and 0.15A maximum DC collector current. Operates with a minimum DC current gain of 80 at 8V/100mA, and a typical transition frequency of 6000MHz. Housed in a 4-pin SOT-223 (TO-261AA) plastic package with gull-wing leads, measuring 6.5mm x 3.5mm x 1.6mm. Suitable for automotive environments with an operating temperature range of -65°C to 150°C.
PCB 3
Tab Tab
ECCN EAR99
Type NPN
Jedec TO-261AA
EU RoHS Yes
Material Si
Mounting Surface Mount
Cage Code CG091
Pin Count 4
Automotive Yes
Lead Shape Gull-wing
Package/Case SOT-223
AEC Qualified Yes
Configuration Single Dual Emitter
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.3
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 3.5
Typical Power Gain 14dB
Package Description Small Outline Transistor
Package Family Name SOT-223
Package Height (mm) 1.6
Package Length (mm) 6.5
Radiation Hardening No
Maximum Noise Figure 2.6(Typ)dB
Minimum DC Current Gain 80@100mA@8V
Seated Plane Height (mm) 1.8(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -65°C
Number of Elements per Chip 1
Operational Bias Conditions 8V/100mA
Maximum DC Collector Current 0.15A
Maximum Emitter Base Voltage 2V
Maximum Transition Frequency 6000(Typ)MHz
Maximum Power 1dB Compression 10.5(Typ)dBm
Minimum DC Current Gain Range 50 to 120
Maximum Collector Base Voltage 25V
Maximum 3rd Order Intercept Point 33(Typ)dBm
Maximum Collector-Emitter Voltage 15V

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