BFG325W/XR,115

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BFG325W/XR,115 - NXP
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Краткое описание: NPN BJT Transistor, 14GHz, 6V, 35mA, SOT-343
Производитель NXP
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN bipolar junction transistor designed for RF wideband applications. Features a 6V collector-emitter breakdown voltage and a 14GHz transition frequency. This surface mount component, housed in a SOT-343 package, offers a continuous collector current of 35mA and a maximum power dissipation of 210mW. Operating across a temperature range of -65°C to 150°C, it boasts a gain of 18.3dB.
Gain 18.3dB
RoHS Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-343
RoHS Compliant Yes
Contact Plating Tin
Package Quantity 1
Operating Frequency 14000 MHz
Transition Frequency 14GHz
Max Breakdown Voltage 6V
Max Collector Current 35mA
Max Power Dissipation 210mW
Gain Bandwidth Product 14GHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 2V
Continuous Collector Current 35mA
Collector Base Voltage (VCBO) 15V
Collector-emitter Voltage-Max 6V
Collector Emitter Breakdown Voltage 6V

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