BFG424F,115
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NPN RF Transistor, 25GHz, 4.5V VCEO, 135mW PD, SO Package
Дополнительная информация
NPN RF transistor designed for high-frequency applications, featuring a 25 GHz operating and transition frequency. This surface mount device offers a maximum collector current of 30mA and a continuous collector current of 25mA, with a maximum power dissipation of 135mW. It operates within a temperature range of -65°C to 150°C and boasts a gain of 23dB with a minimum hFE of 50. The transistor is housed in an SO package with tin contact plating and is RoHS compliant.
| Gain | 23dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 50 |
| Polarity | NPN |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SO |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1 |
| Power Dissipation | 135mW |
| Operating Frequency | 25 GHz |
| Reach SVHC Compliant | No |
| Transition Frequency | 25GHz |
| Max Breakdown Voltage | 4.5V |
| Max Collector Current | 30mA |
| Max Power Dissipation | 135mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 1V |
| Continuous Collector Current | 25mA |
| Collector Base Voltage (VCBO) | 10V |
| Collector-emitter Voltage-Max | 4.5V |
| Collector Emitter Voltage (VCEO) | 4.5V |
| Collector Emitter Breakdown Voltage | 4.5V |
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