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Краткое описание:
NPN BJT Transistor 4GHz 12V 60mA SOT-223 Surface Mount
Дополнительная информация
High-frequency NPN bipolar junction transistor (BJT) for surface mount applications. Features a 4GHz gain bandwidth product and 6GHz transition frequency, with a maximum collector current of 60mA and a collector-emitter breakdown voltage of 12V. Housed in a SOT-223 package with tin plating, this RoHS compliant component operates from -65°C to 175°C and offers 700mW power dissipation.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.7mm |
| Height | 1.7mm |
| Length | 6.7mm |
| Weight | 0.006632oz |
| Polarity | NPN |
| Frequency | 4GHz |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 4GHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1000 |
| Power Dissipation | 700mW |
| Number of Elements | 1 |
| Operating Frequency | 4000 MHz |
| Transition Frequency | 6GHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 60mA |
| Max Power Dissipation | 700mW |
| Gain Bandwidth Product | 4GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 2V |
| Continuous Collector Current | 60mA |
| Collector Base Voltage (VCBO) | 15V |
| Collector-emitter Voltage-Max | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
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