BFN27E6327HTSA1
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PNP BJT Transistor, 300V V(BR)CEO, 200mA I(C), 100MHz, SMT
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V Collector Base Voltage (VCBO) and 300V Collector Emitter Breakdown Voltage. Offers a maximum collector current of 200mA and a transition frequency of 100MHz. Packaged in a TO-236-3 surface mount case with tin, matte contact plating. Operates within a temperature range of -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 40 |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Not Halogen Free |
| Package/Case | TO-236-3 |
| Current Rating | -200mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | -300V |
| Power Dissipation | 360mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 200mA |
| Max Power Dissipation | 360mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector Emitter Breakdown Voltage | 300V |
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