BFP182WH6327XTSA1
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RF NPN Transistor, 8GHz, 35mA, 12V, SOT-343-4
Дополнительная информация
RF Small Signal Bipolar Transistor, NPN polarity, designed for L-Band applications with a maximum frequency of 8GHz and a transition frequency of 8GHz. Features a continuous collector current of 35mA, collector-emitter breakdown voltage of 12V, and a gain of 22dB. Packaged in a 4-pin SOT-343 surface mount configuration with tin contact plating. Operates across a temperature range of -65°C to 150°C, with a maximum power dissipation of 250mW. This RoHS compliant component is supplied in tape and reel packaging.
| Gain | 22dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.8mm |
| Length | 2mm |
| hFE Min | 70 |
| Polarity | NPN |
| Frequency | 8GHz |
| Packaging | Tape and Reel |
| Package/Case | SOT-343-4 |
| Max Frequency | 8GHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 3000 |
| Power Dissipation | 250mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 8GHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 35mA |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 2V |
| Continuous Collector Current | 35mA |
| Collector Base Voltage (VCBO) | 20V |
| Collector-emitter Voltage-Max | 12V |
| Collector Emitter Breakdown Voltage | 12V |
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