BFP193WH6327XTSA1
Производится
Увеличить
Краткое описание:
RF NPN BJT Transistor 8GHz 12V 80mA SOT-343
Дополнительная информация
NPN RF BJT transistor for high-frequency applications, operating up to 8GHz. Features a 12V collector-emitter breakdown voltage and 80mA maximum collector current. This surface-mount component is housed in a 4-pin SOT-343 package, offering 580mW power dissipation and a wide operating temperature range from -55°C to 150°C. Designed for automotive environments, it is RoHS compliant and halogen-free.
| Gain | 20.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.8mm |
| Length | 2mm |
| Polarity | NPN |
| Frequency | 8GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SOT |
| Max Frequency | 8GHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 1 |
| Power Dissipation | 580mW |
| Number of Elements | 1 |
| Transition Frequency | 8GHz |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 80mA |
| Max Power Dissipation | 580mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 2V |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
