BFP196E6327HTSA1

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BFP196E6327HTSA1 - Infineon
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Краткое описание: RF NPN BJT Transistor, 12V 0.1A, 700mW, SOT-143, 7.5GHz
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

RF NPN Bipolar Junction Transistor for surface mount applications. Features a 12V collector-emitter voltage, 0.1A maximum collector current, and 700mW power dissipation. Operates with a minimum DC current gain of 70 at 50mA and 8V, and a typical transition frequency of 7500MHz. Housed in a 4-pin SOT-143 plastic package with gull-wing leads, measuring 2.9mm x 1.3mm x 1mm. Suitable for automotive environments with an operating temperature range of -65°C to 150°C.
PCB 4
ECCN EAR99
Type NPN
Jedec TO-253AA
EU RoHS Yes
HTS Code 8541210075
Material Si
Mounting Surface Mount
Cage Code CG091
Pin Count 4
Automotive Yes
Lead Shape Gull-wing
Package/Case SOT-143
AEC Qualified Yes
Configuration Single Dual Emitter
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 1.9|1.7
Package Material Plastic
Basic Package Type Lead-Frame SMT
Package Width (mm) 1.3
Typical Power Gain 16.5dB
Package Description Small Outline Transistor
Package Family Name SOT
Package Height (mm) 1(Max)
Package Length (mm) 2.9
Maximum Noise Figure 2.3(Typ)dB
Minimum DC Current Gain 70@50mA@8V
Seated Plane Height (mm) 1
Max Operating Temperature 150°C
Maximum Power Dissipation 700mW
Min Operating Temperature -65°C
Typical Input Capacitance 0.35pF
Typical Output Capacitance 0.83pF
Number of Elements per Chip 1
Operational Bias Conditions 8V/50mA
Maximum DC Collector Current 0.1A
Maximum Emitter Base Voltage 2V
Maximum Transition Frequency 7500(Typ)MHz
Maximum Power 1dB Compression 19(Typ)dBm
Minimum DC Current Gain Range 50 to 120
Maximum Collector Base Voltage 20V
Maximum 3rd Order Intercept Point 32(Typ)dBm
Maximum Collector-Emitter Voltage 12V

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