BFP405H6327XTSA1
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RF NPN Transistor, 25GHz, 23dB Gain, 1.25dB NF, SOT
Дополнительная информация
RF Small Signal Bipolar Transistor, NPN polarity, designed for L-Band applications. Features a 25GHz transition frequency and 23dB power gain at 1.8GHz. Operates with a maximum collector current of 25mA and a power dissipation of 75mW. This surface mount component is housed in a SOT package, offering a wide operating temperature range from -65°C to 150°C. Compliant with RoHS standards.
| Gain | 23dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1mm |
| hFE Min | 60 |
| Polarity | NPN |
| Frequency | 25GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Gain | 23dB |
| Termination | SMD/SMT |
| Halogen Free | Halogen Free |
| Noise Figure | 1.25dB |
| Package/Case | SOT |
| RoHS Compliant | Yes |
| Test Frequency | 1.8GHz |
| Package Quantity | 3000 |
| Power Dissipation | 75mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 25GHz |
| Max Breakdown Voltage | 5V |
| Max Collector Current | 25mA |
| Max Power Dissipation | 75mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 1.5V |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Voltage (VCEO) | 4.5V |
| Collector Emitter Breakdown Voltage | 5V |
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