BFP410H6327XTSA1

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BFP410H6327XTSA1 - Infineon
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Краткое описание: RF NPN Transistor, 25GHz, 40mA, 1.2dB NF, SOT-343
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

RF Small Signal NPN Bipolar Transistor, designed for L-band applications. Features a maximum collector current of 40mA and a transition frequency of 25GHz. Offers a noise figure of 1.2dB and a power gain of 21.5dB. Packaged in a SOT-343 surface mount configuration, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
Gain 21.5dB
RoHS Compliant
Mount Surface Mount
hFE Min 60
Polarity NPN
Frequency 25GHz
Lead Free Lead Free
Packaging Tape and Reel
Power Gain 21.5dB
Halogen Free Halogen Free
Noise Figure 1.2dB
Package/Case SOT-343
Max Frequency 25GHz
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 3000
Power Dissipation 150mW
Transition Frequency 25GHz
Max Breakdown Voltage 5V
Max Collector Current 40mA
Max Power Dissipation 150mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 1.5V
Continuous Collector Current 40mA
Collector Base Voltage (VCBO) 13V
Collector-emitter Voltage-Max 4.5V
Collector Emitter Breakdown Voltage 5V

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