BFP420FH6327XTSA1
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Краткое описание:
25GHz RF NPN Transistor, 1.1dB NF, 19.5dB Gain, 60mA IC, TSFP-4
Дополнительная информация
Surface mount NPN RF small signal bipolar transistor designed for C-band applications. Features a 25GHz transition frequency and 19.5dB power gain, with a low noise figure of 1.1dB. Operates with a maximum collector current of 0.06A and a collector emitter breakdown voltage of 5.5V. Packaged in a 1.4mm x 0.8mm x 0.55mm TSFP-4-1 plastic package, this component is halogen-free and RoHS compliant.
| Gain | 19.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.8mm |
| Height | 0.55mm |
| Length | 1.4mm |
| Polarity | NPN |
| Frequency | 25GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Gain | 19.5dB |
| Halogen Free | Halogen Free |
| Noise Figure | 1.1dB |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Power Dissipation | 210mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 25GHz |
| Max Breakdown Voltage | 5.5V |
| Max Collector Current | 60mA |
| Max Power Dissipation | 210mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 1.5V |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Voltage (VCEO) | 4.5V |
| Collector Emitter Breakdown Voltage | 5.5V |
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