BFP450H6327XTSA1
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Краткое описание:
RF Transistor NPN 24GHz 4.5V 100mA SOT-343 SM T/R
Дополнительная информация
NPN RF Bipolar Junction Transistor for high-frequency applications. Features a 24GHz transition frequency and 15.5dB power gain. Operates with a collector-emitter voltage of 4.5V and a max collector current of 100mA. This single-element transistor is housed in a 4-pin SOT-343 surface-mount package, offering 500mW power dissipation. Designed for automotive environments with a wide operating temperature range of -65°C to 150°C.
| Gain | 15.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 800um |
| Length | 2mm |
| Polarity | NPN |
| Frequency | 24GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Gain | 15.5dB |
| Halogen Free | Halogen Free |
| Noise Figure | 1.25dB |
| Package/Case | SOT |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | No |
| Transition Frequency | 24GHz |
| Element Configuration | Single |
| Max Breakdown Voltage | 5V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 450mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 1.5V |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Voltage (VCEO) | 4.5V |
| Collector Emitter Breakdown Voltage | 5V |
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