BFP540ESDH6327XTSA1
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Краткое описание:
RF Transistor NPN 30GHz 4.5V 80mA SOT-343
Дополнительная информация
NPN RF BJT transistor for surface mount applications, featuring a 30 GHz gain bandwidth product and 21.5 dB power gain. This component operates with a maximum collector-emitter voltage of 4.5V and a continuous collector current of 80mA, dissipating up to 250mW. It offers a minimum hFE of 50 and a low noise figure of 0.9dB, packaged in a compact SOT-343 case. Designed for automotive environments, it operates across a temperature range of -65°C to 150°C and is RoHS and Halogen Free compliant.
| Gain | 21.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.8mm |
| Length | 2mm |
| hFE Min | 50 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Gain | 21.5dB |
| Halogen Free | Halogen Free |
| Noise Figure | 0.9dB |
| Package/Case | SOT-343 |
| Max Frequency | 30GHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 1 |
| Operating Frequency | 30 GHz |
| Transition Frequency | 30GHz |
| Max Breakdown Voltage | 5V |
| Max Collector Current | 80mA |
| Max Power Dissipation | 250mW |
| Gain Bandwidth Product | 30GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 1V |
| Continuous Collector Current | 80mA |
| Collector Base Voltage (VCBO) | 10V |
| Collector-emitter Voltage-Max | 4.5V |
| Collector Emitter Breakdown Voltage | 5V |
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