BFP540FESDH6327XTSA1
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Краткое описание:
RF Transistor NPN 30GHz 4.5V 80mA 250mW SMD
Дополнительная информация
NPN RF Bipolar Junction Transistor for surface mount applications. Features a 30GHz transition frequency and 20dB power gain. Operates with a collector emitter voltage of 4.5V and a maximum collector current of 80mA. Offers a low noise figure of 0.9dB and a maximum power dissipation of 250mW. Packaged in a 4-pin TSFP on tape and reel, this component is lead-free, halogen-free, and RoHS compliant, suitable for automotive environments.
| Gain | 20dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | NPN |
| Frequency | 30GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Gain | 20dB |
| Halogen Free | Halogen Free |
| Noise Figure | 0.9dB |
| Package/Case | SMD/SMT |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Power Dissipation | 250mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 30GHz |
| Max Breakdown Voltage | 5V |
| Max Collector Current | 80mA |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 1V |
| Collector Base Voltage (VCBO) | 10V |
| Collector Emitter Voltage (VCEO) | 4.5V |
| Collector Emitter Breakdown Voltage | 5V |
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