BFP640H6327XTSA1

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BFP640H6327XTSA1 - Infineon
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Краткое описание: RF Transistor NPN 40GHz 4.5V 50mA SOT Surface Mount
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

High-frequency NPN RF bipolar junction transistor designed for surface mount applications. Features a 40GHz transition frequency and 24dB power gain, with a low noise figure of 0.65dB. Operates with a collector-emitter voltage of 4V and a maximum collector current of 50mA, supporting a maximum power dissipation of 200mW. Packaged in a 4-pin SOT-343 (3+Tab) for tape and reel distribution, this component is RoHS and Halogen Free, suitable for automotive environments with an operating temperature range of -65°C to 150°C.
Gain 12.5dB
RoHS Compliant
Mount Surface Mount
Polarity NPN
Frequency 40GHz
Lead Free Lead Free
Packaging Tape and Reel
Power Gain 24dB
Halogen Free Halogen Free
Noise Figure 0.65dB
Package/Case SOT
RoHS Compliant Yes
Package Quantity 3000
Power Dissipation 200mW
Number of Elements 1
Reach SVHC Compliant No
Transition Frequency 40GHz
Max Breakdown Voltage 4.5V
Max Collector Current 50mA
Max Power Dissipation 200mW
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 1.2V
Collector Base Voltage (VCBO) 13V
Collector Emitter Voltage (VCEO) 4V
Collector Emitter Breakdown Voltage 4.5V

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