BFP650H6327XTSA1
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Краткое описание:
RF Transistor NPN 41GHz 4V 150mA SOT T/R
Дополнительная информация
RF Transistor, NPN, single element, surface mount, SOT package. Features 41GHz frequency, 4.5V collector-emitter breakdown voltage, 4V collector-emitter voltage, and 150mA max collector current. Delivers 21.5dB power gain and a 0.8dB noise figure. Operates from -65°C to 150°C with 500mW power dissipation. RoHS and Halogen Free compliant.
| Gain | 21.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 900um |
| Length | 2mm |
| Polarity | NPN |
| Frequency | 41GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Gain | 21.5dB |
| Halogen Free | Halogen Free |
| Noise Figure | 0.8dB |
| Package/Case | SOT |
| Max Frequency | 37GHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Power Dissipation | 500mW |
| Number of Elements | 1 |
| Transition Frequency | 37GHz |
| Element Configuration | Single |
| Max Breakdown Voltage | 4.5V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 500mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 1.2V |
| Collector Base Voltage (VCBO) | 13V |
| Collector Emitter Voltage (VCEO) | 4V |
| Collector Emitter Breakdown Voltage | 4.5V |
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