BFP740E6327
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42GHz RF NPN Bipolar Transistor, 30mA, 4V, SOT-343, 27dB Gain
Дополнительная информация
NPN RF small signal bipolar transistor designed for high-frequency applications, operating up to 42GHz. Features a 4V collector-emitter voltage and 30mA continuous collector current. Packaged in a compact SOT-343 surface-mount case, this lead-free component offers a gain of 27dB and a maximum power dissipation of 160mW. Operates across a wide temperature range from -65°C to 150°C.
| Gain | 27dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.9mm |
| Length | 2mm |
| Polarity | NPN |
| Frequency | 42GHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-343 |
| Current Rating | 30mA |
| DC Rated Voltage | 4V |
| Package Quantity | 1 |
| Power Dissipation | 160mW |
| Number of Elements | 1 |
| Operating Frequency | 42000 MHz |
| Radiation Hardening | No |
| Transition Frequency | 42GHz |
| Max Breakdown Voltage | 4.7V |
| Max Collector Current | 30mA |
| Max Power Dissipation | 160mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 1.2V |
| Continuous Collector Current | 30mA |
| Collector Base Voltage (VCBO) | 13V |
| Collector-emitter Voltage-Max | 4V |
| Collector Emitter Voltage (VCEO) | 4V |
| Collector Emitter Breakdown Voltage | 4.7V |
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