BFP840ESDH6327XTSA1
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Краткое описание:
RF Transistor NPN 80GHz 2.25V 35mA SOT-343 SM T/R
Дополнительная информация
RF Transistor, NPN BJT, operating at 80 GHz with a maximum power dissipation of 75mW. Features a 2.25V collector-emitter breakdown voltage and a continuous collector current of 35mA. Offers a noise figure of 0.6dB and a power gain of 27dB. Packaged in a SOT-343 surface-mount case, this component is halogen-free, lead-free, and RoHS compliant, suitable for automotive applications.
| Gain | 18.5dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.8mm |
| Length | 2mm |
| Weight | 0.000226oz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Gain | 27dB |
| Halogen Free | Halogen Free |
| Noise Figure | 0.6dB |
| Package/Case | SOT-343 |
| Max Frequency | 80GHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 3000 |
| Operating Frequency | 80 GHz |
| Transition Frequency | 80GHz |
| Max Breakdown Voltage | 2.25V |
| Max Collector Current | 35mA |
| Max Power Dissipation | 75mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 2.9V |
| Continuous Collector Current | 35mA |
| Collector Base Voltage (VCBO) | 2.9V |
| Collector-emitter Voltage-Max | 2.25V |
| Collector Emitter Voltage (VCEO) | 2.25V |
| Collector Emitter Breakdown Voltage | 2.25V |
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