BFP840FESDH6327XTSA1
Производится
Увеличить
Краткое описание:
RF Transistor NPN 85GHz 2.25V 35mA TSFP Tape & Reel
Дополнительная информация
High-performance RF BJT transistor designed for demanding applications. Features a 2.25V collector-emitter voltage and 35mA continuous collector current. Operates at an impressive 85 GHz with a low noise figure of 0.55dB and power gain of 27.5dB. This NPN transistor offers a wide operating temperature range from -55°C to 150°C and is housed in a 4-pin TSFP surface-mount package, supplied on tape and reel. Compliant with RoHS and Halogen Free standards, with tin contact plating.
| Gain | 35dB |
| RoHS | Compliant |
| Mount | Surface Mount |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Gain | 27.5dB |
| Halogen Free | Halogen Free |
| Noise Figure | 0.55dB |
| RoHS Compliant | Yes |
| Contact Plating | Tin |
| Package Quantity | 3000 |
| Operating Frequency | 85 GHz |
| Transition Frequency | 85GHz |
| Max Breakdown Voltage | 2.6V |
| Max Collector Current | 35mA |
| Max Power Dissipation | 75mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 2.6V |
| Continuous Collector Current | 35mA |
| Collector Base Voltage (VCBO) | 2.9V |
| Collector-emitter Voltage-Max | 2.25V |
| Collector Emitter Voltage (VCEO) | 2.25V |
| Collector Emitter Breakdown Voltage | 2.6V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
