BFP842ESDH6327XTSA1

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BFP842ESDH6327XTSA1 - Infineon
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Краткое описание: RF Transistor NPN 60GHz SOT-343 120mW 40mA
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN RF BJT transistor in SOT-343 package for surface mounting. Features a 3.25V collector-emitter voltage, 40mA continuous collector current, and 120mW maximum power dissipation. Operates at up to 60 GHz with a 0.4dB noise figure and 26dB gain. Designed for automotive applications, it offers a wide operating temperature range from -55°C to 150°C and is RoHS compliant.
Gain 26dB
RoHS Compliant
Mount Surface Mount
Polarity NPN
Lead Free Lead Free
Packaging Tape and Reel
Power Gain 23.5dB
Halogen Free Halogen Free
Noise Figure 0.4dB
Package/Case SOT-343
RoHS Compliant Yes
Contact Plating Tin
Package Quantity 3000
Operating Frequency 60 GHz
Reach SVHC Compliant No
Transition Frequency 60GHz
Max Breakdown Voltage 3.7V
Max Collector Current 40mA
Max Power Dissipation 120mW
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 4.1V
Continuous Collector Current 40mA
Collector Base Voltage (VCBO) 4.1V
Collector-emitter Voltage-Max 3.25V
Collector Emitter Voltage (VCEO) 3.25V
Collector Emitter Breakdown Voltage 3.7V

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